FTB1366F

TRANSISTOR (PNP)

TRANSISTOR(PNP) FEATURES ●LowVCE(sat):VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) ●ComplementarytoFTD2058F

GILLFAB1366

alightweight,highimpactresistant,lowsmokeandtoxicity,fiberglassreinforcedphenoliclaminate

KS1366N

7mmADJUSTABLEIFTCOILS(I)(SHIELDED)

KS1366N

7mmAdjustableshieldedIFTCoil(I)

KS1366N-LFR

7mmAdjustableshieldedIFTCoil(I)

KSB1366

LOWFREQUENCYPOWERAMPLIFIER

LOWFREQUENCYPOWERAMPLIFIER •ComplementtoKSD2012

KSB1366GTU

LOWFREQUENCYPOWERAMPLIFIER

KTB1366

TO-220-3LPlastic-EncapsulateTransistors

FEATURES LowCollectorSaturationVoltage ComplementarytoKTD2058

KTB1366

TRIPLEDIFFUSEDPNPTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •CollectorPowerDissipation :PC=25W(Tc=25ᴱ) •ComplementarytoKTD2058.

KTB1366

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃