ID242

FlashMemoryCard

Introduction ThisdatasheetisforSHARP’sID242seriesflashmemorycard.ThisdatasheetprovidesallACandDCcharacteristics(includingtimingwaveforms)andaconvenientreferenceforthedevicecommandsetandthecard’sintegratedregisters(includingtheFlashMemory’sstatusregisters).T

IDS-242GT-I

Industrial4-portsecureserialtoEthernetdeviceserver

IPC-242

CompactsizeIPCwith10thGenIntel®Core™iCPUSocket(LGA1200)and250WATXPSU

Features ƒIntel10thGenCoreiDesktopLGA1200CPUsupportedwithQ470E/H420E chipset ƒCompactdesignfitinsmallcabinetorlimitedspace ƒ2-3IndependentDisplay(HDMI/VGA/DPorDVI) ƒ4Expansionslots(PCIe/PCI) ƒRichI/O:2xGbE,6xUSB3.2,1xNVMeM.2,2xSATAIII, 2xRS-

IRF242

N-CHANNELPOWERMOSFET

FEATURES •LowRDs

IRF242

N-ChannelPowerMOSFETs,18A,150-200V

N-ChannelPowerMOSFETs,18A,150-200V

IRF242

StaticDrain-SourceOn-Resistance

IRF242R

AvalancheEnergyRatedN-ChannelPowerMOSFETs

AvalancheEnergyRatedN-ChannelPowerMOSFETs TheIRF240R,IRF241R,IRF242RandIRF243RareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearen-channelenhancement-modesilicon-gatepowerfield

IRFP242R

iscN-ChannelMOSFETTransistor

IRFS242

iscN-ChannelMOSFETTransistor

IRFS242

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.22Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.