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FSPYC260R3规格书详情
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
Features
• 58A, 200V, rDS(ON) = 0.031Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSPYC260R3
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIP8 |
14+ |
FAIRCHILD |
47 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
FSC |
2016+ |
DIP8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FSC |
2020+ |
DIP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FSC |
21+ |
DIP8 |
65200 |
一级代理/放心采购 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
329 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
DIP8 |
14+ |
FAIRCHILD |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FSC |
2016+ |
DIP8 |
6528 |
只做原装正品现货!或订货 |
询价 | ||
DIP8 |
21+ |
FAIRCHILD |
47 |
原装现货假一赔十 |
询价 | ||
ISL |
23+ |
65480 |
询价 | ||||
FAIRCILD |
22+ |
DIP-8 |
8000 |
原装正品支持实单 |
询价 |