FSL430R4中文资料PDF规格书
FSL430R4规格书详情
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 2A, 500V, rDS(ON) = 2.50Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 8.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
产品属性
- 型号:
FSL430R4
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ON |
23+ |
9000 |
全新、原装 |
询价 | |||
onsemi(安森美) |
23+ |
PDIP7 |
6000 |
询价 | |||
ON Sem |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
onsemi(安森美) |
21+ |
- |
27500 |
航宇科工半导体-央企合格优秀供方 |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
onsemi |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 | ||
ON/安森美 |
23+ |
7-PDIP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
onsemi |
22+/23+ |
7-PDIP |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
onsemi |
23+ |
8-DIP |
21977 |
确保原装正品,一站式配单-认准水星电子。 |
询价 |