零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FSF9250R | 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
MoldedAxialInductor | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
DualAnalog-to-DigitalConverter | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
14-Bit,170MSPS/250MSPS,JESD204B,DualAnalog-to-DigitalConverter GENERALDESCRIPTION TheAD9250isadual,14-bitADCwithsamplingspeedsofupto250MSPS.TheAD9250isdesignedtosupportcommunicationsapplicationswherelowcost,smallsize,widebandwidth,andversatilityaredesired. FEATURES JESD204BSubclass0orSubclass1codedserialdigital | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DigitalRGB,IRandAmbientLightSensor | AVAGOAvago 安华高安华高科技 | AVAGO | ||
DigitalRGB,IRandAmbientLightSensor | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
VoltageControlledOscillator | APITECH API Technologies Corp | APITECH | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5V/1550nm/2.5Gb/sSignle-ModeGigabitInterfaceConverter(GBIC) | OPTOWAYOptoway Technology Inc 奥普薇科技奥普薇科技股份有限公司 | OPTOWAY |
详细参数
- 型号:
FSF9250R
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
2020+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||||
FairchildSemiconductor |
2022 |
ICSWITOVPUVLO9SIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
FAIRCHILD |
23+ |
9-SIP |
7750 |
全新原装优势 |
询价 | ||
FairchildSem |
22+ |
9-SIP |
6980 |
原装现货,可开13%税票 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
harris |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
FAI |
RoHSCompliant |
Tube |
1007 |
neworiginal |
询价 | ||
FSC/ON |
23+ |
原包装原封□□ |
2157 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
询价 | ||
ON现货 |
2022+ |
10-SIP模块 |
350000 |
专注工业、军工级别芯片,十五年优质供应商 |
询价 | ||
FAIRCHILD/仙童 |
13+ |
SIP9 |
27173 |
进口原管现货 |
询价 |
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