Dual N-Channel Enhancement Mode Power MOSFET

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One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

文件：1.038609 Mbytes 页数：13 Pages

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富晶电子

One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

文件：1.038609 Mbytes 页数：13 Pages

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富晶电子

Dual N-Channel Enhancement Mode Power MOSFET

文件：765.33 Kbytes 页数：6 Pages

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二合一单节电池保护芯片

The FS8820P battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones. The ultra-small package and less requir •With built-in N-MOSFET of low turn-on resistance.\n•Reduction in Board Size due to Miniature Package TSSOP-8.\n•Protection IC：\n•Ultra-Low Quiescent Current at 3μA (Vcc=3.9V).\n•Ultra-LowOverdischarge Current at 3μA (Vcc=2.0V).\n•Overcharge Protection Voltage 4.28V ± 25mV\n•Overdischarge Protection;

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锂电池保护MOSFET

Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging switch .\r\n The SOT-23-6 package is universally used for all commercial-industrial applications. ·Low on-resistance\r\n·RDS(ON) = 24 mΩ MAX. (VGS = 4.5V, ID = 6A)\r\n·RDS(ON) = 32 mΩ MAX. (VGS = 2.5V, ID = 5A)\r\n·ESD Rating: ≧2000V HBM;

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低压MOS管

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