Electrical Features

•Blocking voltage 750V

•Low VCEsat

•Low Switching Losses

•Low Qg and Crss

•Low Inductive Design

•Tvj op = 150°C

•Short-time extended Operation Temperature

Tvj op = 175°C

Mechanical Features

•4.2kV DC 1sec Insulation

•High Creepage and Clearance Distances

•Compact design

•High Power Density

•Direct Cooled Base Plate with Ribbon Bonds

•Guiding elements for PCB and cooler assembly

•Integrated NTC temperature sensor

•PressFIT Contact Technology

•RoHS compliant

•UL 94 V0 module frame

Description

The HybridPACKTM Drive is a very compact

six-pack module optimized for hybrid and electric

vehicles. The product FS770R08A6P2FB comes

with a flat baseplate and bonded cooling structure

and is a 750V/770A module derivate within the

HybridPACK Drive family. The power module

implements the new EDT2 IGBT generation, which

is an automotive Micro-Pattern Trench-Field-Stop

cell design optimized for electric drive train

applications. The chipset has benchmark current

density combined with short circuit ruggedness and

increased blocking voltage for reliable inverter

operation under harsh environmental conditions.

The EDT2 IGBTs also show excellent light load

power losses, which helps to improve system

efficiency over a real driving cycle. The EDT2 IGBT

was optimized for applications with switching

frequencies in the range of 10 kHz.

The new HybridPACKTM Drive power module family

comes with mechanical guiding elements

supporting easy assembly processes for customers.

Furthermore, the press-fit pins for the signal

terminals avoid additional time consuming selective

solder processes, which provides cost savings on

system level and increases system reliability. The

products in the HybridPACK Drive family with flat

baseplate FS660R08A6P2FB; PinFin baseplate

FS820R08A6P2B as well as the FS770R08A6P2B

derivate allow a very cost effective scaling for

different inverter power levels at a minimum inverter

design effort.

FS770R08A6P2B属于分立半导体产品 > 晶体管 - IGBT - 模块。英飞凌科技股份公司制造生产的FS770R08A6P2B晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。