FS14SM-12

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.60Ω ●ID......................................................................................

FS14SM-12

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.60Ω ●ID......................................................................................

FS14SM-12

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.60Ω ●ID......................................................................................

FS14SM-12

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.60Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FS14SM-12_15

HIGH-SPEED SWITCHING USE

FK14SM-12

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.75Ω ●ID.......................................................................................

FK14SM-12

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.75Ω ●ID.......................................................................................

FK14SM-12

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon