零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
DC/DCConverterApplications Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI |
详细参数
- 型号:
FRX234R
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.5A I(D) | LLCC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DBLECTRO |
23+ |
原厂原包 |
29960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
FUZETEC(台湾富致) |
2447 |
Through Hole |
115000 |
100个/袋一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
FUZETEC |
06+36 |
100 |
公司优势库存 热卖中! |
询价 | |||
FUZTE/富致 |
25+ |
DIP |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
FUZTE/富致 |
2018+ |
DIP |
88000 |
原装现货 |
询价 | ||
FUZETEC/富致 |
25+ |
DIP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
集电通/JDT |
2450+ |
SMD |
6540 |
只做原厂原装现货或订货假一赔十! |
询价 | ||
富致/FUZETEC |
23+ |
DIP |
130000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FUZETEC/富致 |
24+ |
DIP |
60000 |
全新原装现货 |
询价 |
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