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FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSS234

DC/DCConverterApplications

Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

FT234XDR

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd.

飞特帝亚英商飞特帝亚有限公司

详细参数

  • 型号:

    FRX234R

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.5A I(D) | LLCC

供应商型号品牌批号封装库存备注价格
DBLECTRO
23+
原厂原包
29960
只做进口原装 终端工厂免费送样
询价
FUZETEC(台湾富致)
2447
Through Hole
115000
100个/袋一级代理专营品牌!原装正品,优势现货,长期
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
FUZETEC
06+36
100
公司优势库存 热卖中!
询价
FUZTE/富致
25+
DIP
860000
明嘉莱只做原装正品现货
询价
FUZTE/富致
2018+
DIP
88000
原装现货
询价
FUZETEC/富致
25+
DIP
54648
百分百原装现货 实单必成 欢迎询价
询价
富致/FUZETEC
23+
DIP
130000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FUZETEC/富致
24+
DIP
60000
全新原装现货
询价
LAIRD
20+
射频元件
55
就找我吧!--邀您体验愉快问购元件!
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更多FRX234R供应商 更新时间2025-5-21 8:02:00