7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rangi

文件：48.6 Kbytes 页数：6 Pages

INTERSIL

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

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文件：381.01 Kbytes 页数：10 Pages

TOSHIBA

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文件：381.01 Kbytes 页数：10 Pages

TOSHIBA

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