12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.87 Kbytes 页数：6 Pages

INTERSIL

12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs

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12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.87 Kbytes 页数：6 Pages

INTERSIL

12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.87 Kbytes 页数：6 Pages

INTERSIL

2012 Size 2400/2500 MHz Chip Multilayer Splitter/Combiner

文件：52.22 Kbytes 页数：4 Pages

HITACHI-METALS

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