3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25MΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

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INTERSIL

3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

High Voltage Ring Generator

General Description The Supertex HV430 is a high voltage PWM ring generator integrated circuit. The high voltage outputs, VPGATE and VNGATE, are used to drive the gates of external high voltage P-channel and N-channel MOSFETs in a push-pull configuration. Over current protection is implemented fo

文件：119.83 Kbytes 页数：8 Pages

SUTEX

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

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PANASONIC

松下

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD − 30 dB ■ GOLD METALLIZATION ■ COMM

文件：148.32 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体