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FSGS230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSGYE230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. Star*PowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL230R4

5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPL230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPS230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*Power™RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS230R4

8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FRM230R4

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA

供应商型号品牌批号封装库存备注价格
isc
2024
TO-3
150
国产品牌isc,可替代原装
询价
FERROXCUBE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
YAGEO/国巨
2022+
DIP
25000
原厂代理 终端免费提供样品
询价
YAGEO/国巨
23+
DIP
6800
专注配单,只做原装进口现货
询价
YAGEO-国巨
24+25+/26+27+
车规-电阻器
76052
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
YAGEO/国巨
23+
DIP
6800
专注配单,只做原装进口现货
询价
YAGEO
6000
面议
19
N/A
询价
PHYCOMP
ERX3SJ6R8A
10000
全新原装现货 样品可售
询价
PHYCOMP
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FUJITSU
2001
光纤线
9
原装现货海量库存欢迎咨询
询价
更多FRM230R4供应商 更新时间2024-4-29 12:06:00