5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

文件：47.62 Kbytes 页数：6 Pages

INTERSIL

5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description\nThe Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ran • 5A, -100V, RDS(on) = 0.550Ω\n• Second Generation Rad Hard MOSFET Results From New Design Concepts\n• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)\n- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)\n- Performance Permits Limited Use to 3000KRAD(Si)\n• Gamma Dot - Survives 3E9RAD(Si)/;

Renesas

瑞萨

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

SAMSUNG

三星

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

文件：459.25 Kbytes 页数：6 Pages

TOSHIBA

东芝