N-Channel Enhancement MOSFET

Features  VDS=650V, ID=4A  RDS(ON)=2.2Ω@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management

文件：1.26704 Mbytes 页数：5 Pages

GWSEMI

唯圣电子

4A 650V N-channel Super Junction Power MOSFET ?

文件：1.18598 Mbytes 页数：11 Pages

WXDH

东海半导体

4A 650V N-channel Super Junction Power MOSFET ?

文件：1.19 Mbytes 页数：11 Pages

WXDH

东海半导体

4A 650V N-channel Super Junction Power MOSFET ?

文件：1.1851 Mbytes 页数：11 Pages

WXDH

东海半导体