包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 460MHZ WHIP STR BRKT MT

TE Connectivity Laird

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：48.7 Kbytes 页数：6 Pages

INTERSIL

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：48.7 Kbytes 页数：6 Pages

INTERSIL

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：48.7 Kbytes 页数：6 Pages

INTERSIL