首页 >FQP34N20C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=17.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VN-ChannelMOSFET Features •17.5A,200V,RDS(on)=0.075Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical55pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
THINKI40A,200VMaturedPlanarN-ChannelPowerMOSFETs Features •40A,200V,RDS(on)=0.060Ω@VGS=10V •Lowgatecharge(typical154nC) •LowCrss(typical101pF) •Fastswitching •100%avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=17.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN0CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
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