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JCS16N25RC-R-BR

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical16pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS16N25VC-V-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical16pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS16N25VC-V-BR

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical16pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

KF16N25D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=13A •Drai

KECKEC CORPORATION

KEC株式会社

KF16N25F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=16A •Drai

KECKEC CORPORATION

KEC株式会社

KSMD16N25C

250VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF16N25

250VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB16N25E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB16N25E

TMOSPOWERFET16AMPERES

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP16N25E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FQP16N25C_Q

  • 功能描述:

    MOSFET 250V N-Channel Advance Q-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
三年内
1983
只做原装正品
询价
ON Sem
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
FAIRCHILD
12+
TO220
350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
TO-220
4000
正规渠道,只有原装!
询价
ON
22+
6000
代理原装正品
询价
ON
23+
TO-220
6500
原厂原装正品
询价
ONSEMI
两年内
N/A
14000
原装现货,实单价格可谈
询价
FAIRCHILD
21+
TO220
350
原装现货假一赔十
询价
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
24+
TO220
39197
郑重承诺只做原装进口现货
询价
更多FQP16N25C_Q供应商 更新时间2025-5-18 11:08:00