FQI50N06L中文资料仙童半导体数据手册PDF规格书
FQI50N06L规格书详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
产品属性
- 型号：
FQI50N06L
- 功能描述：
MOSFET 60V N-Channel QFET Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SMD |
1000 |
原装现货 |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
FAIRC |
2020+ |
TO-262(I2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO262 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
询价 | ||
onsemi(安森美) |
23+ |
I2PAK(TO262) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO262 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
安森美 |
21+ |
12588 |
原装现货,价格优势 |
询价 | |||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAIRCHILD/仙童 |
22+ |
TO-262 |
20000 |
保证原装正品,假一陪十 |
询价 |
