FQD7N20LTM-TP说明书PDF资料供应代理-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FQD7N20LTM-TP	文件：2.08463 Mbytes Page：5 Pages	丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET Features Vos = 200V,lp =5.5A Ros(on) 文件：2.08463 Mbytes 页数：5 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
FQD7N20TF	文件：808.34 Kbytes Page：9 Pages	200V N- Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h 文件：808.34 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQI7N20	文件：691.44 Kbytes Page：9 Pages	200V N-Channel MOSFET 文件：691.44 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQI7N20L	文件：569.02 Kbytes Page：9 Pages	200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h 文件：569.02 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多FQD7N20LTM-TP供应商更新时间2026-2-9 11:06:00