FQB3P50中文资料仙童半导体数据手册PDF规格书

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

特性 Features

• -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V

• Low gate charge ( typical 18 nC)

• Low Crss ( typical 9.5 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability