Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ05N10Q uses advanced trench technology and design to p rovide excellent RDS(ON) This device is suitable for use in a wide variety of applications. with low gate charge. FEATURES Lead free product is acquired Special process technology for high ESD capability High dens

文件：757.14 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Dual N-Channel MOSFET

文件：535.03 Kbytes 页数：4 Pages

FS

N-Channel Enhancement Mode Power MOSFET

文件：380.23 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

5A , 100V , RDS(ON) 170 m
N-Channel Enhancement Mode Power MOSFET

文件：2.19561 Mbytes 页数：4 Pages

SECOS

喜可士