FPDA200V中文资料FILTRONIC数据手册PDF规格书
FPDA200V规格书详情
DESCRIPTION AND APPLICATIONS
The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
FEATURES
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz
♦ 12.5 dB Power Gain at 18 GHz
♦ 55 Power-Added Efficiency
♦ Source Vias to Backside Metallization
产品属性
- 型号:
FPDA200V
- 制造商:
FILTRONIC
- 制造商全称:
FILTRONIC
- 功能描述:
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FCS |
25+23+ |
SPM27 |
15260 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILDSEM |
24+ |
SPM27GA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
FAIRCHILD |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SPM-27 |
6666 |
原装正品,假一罚十! |
询价 | ||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
询价 | ||
NS |
23+ |
LLP48 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FAIRCHILD |
MODULE |
5350 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
onsemi(安森美) |
24+ |
DIP27 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |