GENERAL PURPOSE PHEMT

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GENERAL PURPOSE PHEMT

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pHEMT

The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 μm x 200 μm Schottky barrier gate that is defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial struc • 5 dBm Output P1dB\n• 17 dB Maximum Stable Gain at 12 GHz\n• 45% Power-Added Efficiency;

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GENERAL PURPOSE PHEMT

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HI-FREQUENCY PACKAGED PHEMT

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High-Frequency Packaged pHEMT

The FPD7612P70 is a low- parasitic, surface- mountable- packaged depletion- mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimized for low- noise, high- frequency applications. • 22 dBm Output Power (P1dB)\n• 21 dB Gain at 1.85 GHz\n• 5 dB Noise Figure at 1.85 GHz\n• 30 dB Output IP3 at 1.85 GHz\n• 45% Power-Added Efficiency at 1.85 GHz\n• Usable Gain to 24 GHz;

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