IRHMJ7250

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(TO-254AATabless)

IRHMJ7250

SimpleDriveRequirements

IRHN7250

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.10ohm,Id=26A)

200Volt,0.10Ω,MEGARADHARDHEXFET InternationalRectifier’sMEGARADHARDtechnologyHEXFETpowerMOSFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas1x106Rads(Si).Underidenticalpre-andpost-radiationtestcondi

IRHN7250

RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology

Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 

IRHN7250

SimpleDriveRequirements

IRHN7250SE

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(SMD-1)

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(SMD-1) InternationalRectifier’sRADHardTMHEXFET®MOSFETtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshave

IRHN7250SE

SimpleDriveRequirements

L7250

5V&12VSPINDLEANDVCMMOTORSDRIVER

DESCRIPTION L7250isapowerICfordrivingtheSPINDLEandVCMmotors,suitablefor5V&12Vapplication.ThespindlesystemincludesintegratedpowerFETswhicharedrivenusingSTsSmoothdrivepseudo-sinusoidalcommutationtechnology.Thevoicecoilmotor(VCM)systemincludesintegratedp

LPCI-7250

8-CHRelayOutputs&8-CHIsolatedDICards

LPCI-7250

8-CHRelayOutputs&8-CHIsolatedDICards