RF AMPLIFIER MODEL

文件：199.15 Kbytes 页数：1 Pages

APITECH

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The HMBT6520 is complementary to HMBT6517

文件：29.72 Kbytes 页数：3 Pages

HSMC

华昕

20 W PD output integrates multiple fast charging output protocols

1 Features Ÿ Synchronous switch buck converter  Built-in power MOS  Input operating voltage range: 7 1 V to 32 V  Output voltage range: 3 V to 1 2 V, according to fast charging protocol auto-adjust  PD output power maximum 20 W 5V/3A 9V 2.22A 12V 1.67A  Output voltage with line compen

文件：821.2 Kbytes 页数：16 Pages

INJOINIC

英集芯科技

integrated Dual port Type C PD 3.0 (waiting for fast charging protocol output SOC IC

1 Features Ÿ Synchronous switch buck converter  Built-in power MOS  Input operating voltage range: 8.2 V to 32 V  Output voltage range: 3 V to 12 V, according to fast charging protocol auto-adjust  Output voltage with line compensation function 50 mV /A  The PD output has CV/CC charact

文件：872.7 Kbytes 页数：18 Pages

INJOINIC

英集芯科技