P-Channel Enhancement MOSFET

Features  VDS=-40V, ID=-45A  RDS(ON)=12mΩ@VGS=-10V(Typ.)  RDS(ON)=17mΩ@VGS=-4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：1.32597 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

Subminiature PCB Power Relay

文件：54.62 Kbytes 页数：2 Pages

DBLECTRO

2-CHANNEL AF POWER AMP FOR TAPE RECORDER RADIO

文件：56.58 Kbytes 页数：1 Pages

SANYO

三洋

2.3 W 2-Channel AF Power Amplifier for Radio Cassette Players

Features • Built-in 2 channels enabling use in stereo and bridge amplifier (BTL) applications. • High-output: 2.3 W typ./channel, VCC = 9 V, RL = 4 Ω 4.7 W typ./bridge amplifier, VCC = 9 V, RL = 8 Ω • Low switching distortion at high frequencies. • Minimum number of external parts required: 9

文件：286.29 Kbytes 页数：11 Pages

SANYO

三洋