FP2189-G

1 - Watt HFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

FP2189-G

1-Watt HFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

FP2189-G

1 watt HFET; ·  50 –4000 MHz\n·  +30 dBm P1dB\n·  +43 dBm Output IP3\n·  High Drain Efficiency\n·  18.5 dB Gain @ 900 MHz\n·  Lead-free/Green/RoHS compliant SOT-89 Package\n·  MTTF 100 YearsApplications\n·  Mobile Infrastructure\n·  CATV / DBS\n·  W-LAN / ISM\n·  RFID\n·  Defense / Homeland Security\n·  Fixed Wireless;

Product Description\nThe FP2189 is a high performance  1- Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1 -dB compression, while providing 18.5 dB gain at 900 MHz.Product

FP2189-RFID

1-WattHFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

HAT2189WP

SiliconNChannelPowerMOSFETPowerSwitching

HAT2189WP

SiliconNChannelPowerMOSFETPowerSwitching