FP1200BB

10AX 1G Intermediate Switch

DESCRIPTION10AX1GIntermediateSwitch-BrushedBrass

FP1200GM

10AX 1G Intermediate Switch - Gunmetal

DESCRIPTION10AX1GIntermediateSwitch-Gunmetal

FP1200PB

10AX 1G Intermediate Switch

DESCRIPTION10AX1GIntermediateSwitch-PolishedBrass

FP1200PL

10AX 1G Intermediate Switch - Pearl

DESCRIPTION10AX1GIntermediateSwitch-Pearl

FP1205

P-Channel Enhancement MOSFET

Features VDS=-12V,ID=-5A RDS(ON)=30mΩ@VGS=-4.5V(Typ.) RDS(ON)=38mΩ@VGS=-2.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FP120F60ADNS1

FAST RECOVERY DIODE

APPLICATIONS UPS PFC InversionWelder Solarinverter FEATURES Planarpassivatedchips Lowpowerloss,highefficiency Veryshortrecoverytime SoftRecoveryCharacteristics

FP120F60ADNS1-NS1-BR

丝印：FP120F60ADNS1；Package：SOT-227；FAST RECOVERY DIODE

APPLICATIONS UPS PFC InversionWelder Solarinverter FEATURES Planarpassivatedchips Lowpowerloss,highefficiency Veryshortrecoverytime SoftRecoveryCharacteristics

FP125F

High Voltage Rectifier Stacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded

FP125F

12,500 V - 20,000 V Rectifier Stacks 2.2 A Forward Current 150 ns Recovery Time

[VMI] 12,500V-20,000VRectifierStacks 2.2AForwardCurrent 150nsRecoveryTime

FP125F

High Voltage Rectifier Stacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded