FP10R12W1T7_B11分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

FP10R12W1T7_B11属于分立半导体产品的晶体管-IGBT-模块。由英飞凌科技股份公司制造生产的FP10R12W1T7_B11晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

Features

• Single-channel isolated gate driver

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to 6.5 A typical peak output current

• 45 ns propagation delay with 7 ns part-to-part matching (skew)

• 35 V absolute maximum output supply voltage

• High common-mode transient immunity CMTI > 300 kV/μs

• Separate source and sink outputs with active shutdown and short circuit clamping

• Galvanically isolated coreless transformer gate driver

• 3.3 V and 5 V input supply voltage

• Suitable for operation at high ambient temperature and in fast switching applications

• UL 1577 certification VISO = 3.0 kV (rms) for 1 min