FODM214_V01中文资料安森美半导体数据手册PDF规格书

The FODM217 series consist of a gallium arsenide infrared emitting

diode driving a phototransistor. The FODM214 series consist of two

gallium arsenide infrared emitting diodes connected in inverse parallel

for AC operation. Both were built in a compact, half−pitch, mini−flat,

4−pin package. The lead pitch is 1.27 mm.

Features

• Current Transfer Ratio Ranges from 20 to 600

at IF = ±1 mA, VCE = 5 V, TA = 25°C

♦ FODM214 − 20 to 400

♦ FODM214A − 50 to 250

at IF = 5 mA, VCE = 5 V, TA = 25°C

♦ FODM217A − 80 to 160

♦ FODM217B − 130 to 260

♦ FODM217C − 200 to 400

♦ FODM217D − 300 to 600

• Safety and Regulatory Approvals:

♦ UL1577, 3750 VACRMS for 1 min

♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

• Applicable to Infrared Ray Reflow, 260°C

Typical Applications

• Primarily Suited for DC−DC Converters

• For Ground Loop Isolation, Signal to Noise Isolation

• Communications – Adapters, Chargers

• Consumer – Appliances, Set Top Boxes

• Industrial – Power Supplies, Motor Control, Programmable Logic

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