FOD8314数据手册ONSEMI中文资料规格书

描述 Description

FOD8314 系列是一个 1.0 A 的输出电流栅极驱动光电耦合器，可驱动中等功率的 IGBT/MOSFET。它非常适用于快速开关驱动在电机控制变频应用以及高性能电源系统中使用的功率 IGBT 和 MOSFET。FOD8314 系列利用宽体封装，实现 8 mm 爬电距离和净空距离 (FOD8314T)，利用优化的 IC 设计实现可靠的高绝缘电压和高抗噪声能力。 FOD8314 系列是由与包含高速驱动器的集成电路进行光耦合的铝砷化镓 (AlGaAs) 发光二极管组成，可实现推挽式 MOSFET 输出级。该器件包含在一个宽体 6 引脚小型塑料封装中。

特性 Features

• FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
• 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
• 20 kV/μs Minimum Common Mode Rejection
• Wide Supply Voltage Range: 15 V to 30 V
• Fast Switching Speed Over Full Operating Temperature Range– 500 ns Maximum Propagation Delay– 300 ns Maximum Pulse Width Distortion
• Under-Voltage Lockout (UVLO) with Hysteresis
• Extended Industrial Temperate Range: -40°C to 100°C
• Safety and Regulatory Approvals:– UL1577, 5,000 VACRMS for 1 Minute– DIN EN/IEC60747-5-5, 1,140 V Peak Working Insulation Voltage

应用 Application

• AC and Brushless DC Motor Drives
• Industrial Inverter
• Uninterruptible Power Supply
• Induction Heating
• Isolated IGBT/Power MOSFET Gate Drive