4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

文件：388.93 Kbytes 页数：12 Pages

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丝印：817；Package：DIP4-Pin；4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

文件：486.79 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

文件：388.93 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：817；Package：DIP4-Pin；4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

文件：486.79 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes 页数：12 Pages

ONSEMI

安森美半导体