FOD8173数据手册ONSEMI中文资料规格书

描述 Description

The FOD8173 series packaged in a stretched body 6−pin small
outline plastic package, consists of an aluminum gallium arsenide
(AlGaAs) light emitting diode and a CMOS detector IC comprises an
integrated photodiode, a high speed transimpedance amplifier and a
voltage comparator with a totem−pole output driver. The electrical and
switching characteristics are guaranteed over the extended industrial
temperature range of −40°C to 100°C and a VDD range of 3 V to 5.5 V.

特性 Features

• FOD8173T − 8 mm Creepage and Clearance Distance, and 0.4 mminsulation distance
• 20 kV/µs Minimum CMTI
• 20 Mbit/sec Date Rate (NRZ) 55ns max. Propagation Delay 20ns max. Pulse Width Distortion
• 3.3 V and 5 V CMOS Compatibility
• Specifications Guaranteed Over 3 V to 5.5 V supply voltage and −40 to 100°C extended industrial temperature range
• UL1577, 5,000 VACRMS for 1 min. DIN−EN/IEC60747−5−5, 1,140 V peak working insulation voltage for FOD8173T

应用 Application

• Microprocessor System Interface
• Industrial Field Bus Communications
• Programmable Logic Control
• Isolated Data Acquisition System
• Voltage Level Translator