3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

Features ■ FOD060L in SO8 and FOD260L in 8-pin DIP ■ Very high speed – 10 MBit/s ■ Superior CMR — 50 kV/μs at 1,000V peak ■ Fan-out of 8 over -40°C to +85°C ■ Logic gate output ■ Strobable output ■ Wired OR-open collector ■ Safety and regulatory approvals – UL1577 – DIN EN/IEC 60747-5-2

文件：890.65 Kbytes 页数：20 Pages

ONSEMI

安森美半导体

3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

Features ■ FOD060L in SO8 and FOD260L in 8-pin DIP ■ Very high speed – 10 MBit/s ■ Superior CMR — 50 kV/μs at 1,000V peak ■ Fan-out of 8 over -40°C to +85°C ■ Logic gate output ■ Strobable output ■ Wired OR-open collector ■ Safety and regulatory approvals – UL1577 – DIN EN/IEC 60747-5-2

文件：890.65 Kbytes 页数：20 Pages

ONSEMI

安森美半导体

3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

Features ■ FOD060L in SO8 and FOD260L in 8-pin DIP ■ Very high speed – 10 MBit/s ■ Superior CMR — 50 kV/μs at 1,000V peak ■ Fan-out of 8 over -40°C to +85°C ■ Logic gate output ■ Strobable output ■ Wired OR-open collector ■ Safety and regulatory approvals – UL1577 – DIN EN/IEC 60747-5-2

文件：890.65 Kbytes 页数：20 Pages

ONSEMI

安森美半导体

31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.09 Kbytes 页数：6 Pages

INTERSIL