FMND2G08U3D中文资料NAND内存数据手册Dosilicon规格书

描述 Description

Density: 2Gb
ECC: 4bit
Voltage: 3.3V
P/N: FMND2G08U3D
Bus Width: X8
Speed: 25ns
Temp.Range: 0℃~70℃, -25℃~85℃, -40℃~85℃
PKG (mm):
 TSOP 48 (12*20)
 VFBGA 63 (9*11)
 VFBGA 67 (6.5*8)
Status: MP
 

特性 Features

■ X8 I/O BUS
－ NAND Interface
－ ADDRESS / DATA Multiplexing
■ SUPPLY VOLTAGE
－ VCC = 2.7-3.6 Volt core supply voltage for Program, Erase and Read operations
■ PAGE READ / PROGRAM
－ X8: (2048+64 spare) byte
－ Synchronous Page Read Operation
－ Random access: 25us (Max)
－ Serial access: 25ns (2.7/3.0V)
－ Page program time: 300us (Typ)
■ PAGE COPY BACK
－ Fast data copy without external buffering
■ CACHE PROGRAM
－ Internal buffer to improve the program throughput
■ READ CACHE
■ LEGACY/ONFI 1.0 COMMAND SET
■ FAST BLOCK ERASE
－ Block size (X8): (128K + 4K) bytes
－ Block erase time: 2ms (Typ)
■ MEMORY CELL ARRAY
－ X8: (2K + 64) bytes x 64 pages x 2048 blocks
■ ELECTRONIC SIGNATURE
－ Manufacturer Code
－ Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
■ DATA RETENTION
－ 50K Program / Erase cycles
－ Data retention: 10 Years(4bit/512byte ECC)