N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applica

文件：459.36 Kbytes 页数：5 Pages

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功率MOSFET 400V-500V

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N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：429.99 Kbytes 页数：5 Pages

FUJI

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N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applica

文件：550.05 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：430.98 Kbytes 页数：5 Pages

FUJI

富士通