isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.18 Kbytes 页数：2 Pages

ISC

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N-CHANNEL SILICON POWER MOSFET

文件：583.63 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 600V-700V

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SMPS MOSFET

文件：149.87 Kbytes 页数：9 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 470mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.76 Kbytes 页数：2 Pages

ISC

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Low V CE(sat) IGBT - Short Circuit SOA Capability

文件：48.39 Kbytes 页数：2 Pages

IXYS

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