FM24C16B-G集成电路（IC）的存储器规格书PDF中文资料

FM24C16B-G属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的FM24C16B-G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description

The FM24C16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

特性 Features

■16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8

❐High-endurance 100 trillion (1014) read/writes

❐151-year data retention (See the Data Retention and Endurancetable)

❐NoDelay™ writes

❐Advanced high-reliability ferroelectric process

■Fast 2-wire Serial interface (I2C)

❐Up to 1-MHz frequency

❐Direct hardware replacement for serial (I2C) EEPROM

❐Supports legacy timings for 100 kHz and 400 kHz

■Low power consumption

❐100 A active current at 100 kHz

❐4 A (typ) standby current

■Voltage operation: VDD= 4.5 V to 5.5 V

■Industrial temperature: –40 C to +85 C

■8-pin small outline integrated circuit (SOIC) package

■Restriction of hazardous substances (RoHS) compliant