FM24C04B-G集成电路（IC）的存储器规格书PDF中文资料

FM24C04B-G属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的FM24C04B-G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The FM24C04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

特性 Features

4K bit Ferroelectric Nonvolatile RAM

• Organized as 512 x 8 bits

• High Endurance 1012 Read/Writes

• 38 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

• Up to 1 MHz maximum bus frequency

• Direct hardware replacement for EEPROM

• Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

• 5V operation

• 100 µA Active Current (100 kHz)

• 4 µA (typ.) Standby Current

Industry Standard Configuration

• Industrial Temperature -40° C to +85° C

• 8-pin “Green”/RoHS SOIC (-G)