FM24C04B-G集成电路（IC）的存储器规格书PDF中文资料

描述 Description

The FM24C04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

特性 Features

4K bit Ferroelectric Nonvolatile RAM

• Organized as 512 x 8 bits

• High Endurance 1012 Read/Writes

• 38 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

• Up to 1 MHz maximum bus frequency

• Direct hardware replacement for EEPROM

• Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

• 5V operation

• 100 µA Active Current (100 kHz)

• 4 µA (typ.) Standby Current

Industry Standard Configuration

• Industrial Temperature -40° C to +85° C

• 8-pin “Green”/RoHS SOIC (-G)