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BR230SURA

BRSurgeBreaker

Features&Benefits: •Completehomesurge protectionforallcircuitsplus afunctional2-polethermal magneticbreaker •Directconnectiontothe busbarprovidessuperior protectionandeasyinstallation fornewconstructionor renovation •MeetsbothUL489aswell asUL14493rdEdi

EATONEaton All Rights Reserved.

伊顿伊顿公司

FM230-S

2ASMDSCHOTTKYBARRIERRECTIFIERS,20V-200V

FRONTIER

Frontier Electronics

FME-230A

100V,30ASchottkybarrierdiodeinTO220Fpackage

SankenSanken Electric Co Ltd.

三垦日本三垦

FMEN-230A

HighVoltageSchottkyBarrierRectifier

SankenSanken Electric Co Ltd.

三垦日本三垦

FMEN-230A

HighVoltageSchottkyBarrierRectifier

SankenSanken Electric Co Ltd.

三垦日本三垦

FMEN-230B

SiliconSchottkyBarrierDiode

Scope ThepresentspecificationsshallapplytoanFMEN-230B. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent)

SankenSanken Electric Co Ltd.

三垦日本三垦

FMEN-230B

SiliconSchottkyBarrierDiode

SankenSanken Electric Co Ltd.

三垦日本三垦

FML230

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

FMM230

LOWVfSCHOTTKYBARRIERRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

FMM230A

LOWVfSCHOTTKYBARRIERRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

FRL230D

5A,200V,0.500Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRL230H

5A,200V,0.500Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRL230R

5A,200V,0.500Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM230D

8A,200V,0.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM230H

8A,200V,0.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM230R

8A,200V,0.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS230D

7A,200V,0.515Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS230H

7A,200V,0.515Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS230R

7A,200V,0.515Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSAF230A

On/Off,SpringReturnFail-Safe,AC230V

BELIMOBELIMO AIRCONTROLS (USA), INC

贝里莫航空 贝里莫航空控制(美国)有限公司

详细参数

  • 型号:

    FM230-N

  • 制造商:

    FORMOSA

  • 制造商全称:

    Formosa MS

  • 功能描述:

    Chip Schottky Barrier Diodes - Silicon epitaxial planer type

供应商型号品牌批号封装库存备注价格
FORMOSA
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
RECTIFIER2A
DO214AA sma2A
FM240 FM250 FM260 FM280 FM220
50000
全新原装现货 样品可售
询价
Crownpo
16+
SMA-S
85400
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
Crownpo
20+
SMA-S
36800
原装优势主营型号-可开原型号增税票
询价
Crownpo
2023+
SMA-S
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Crownpo
22+
SMA-S
85400
原装现货假一赔十
询价
CROWNPO
22+
SMA-S
354000
询价
FM230-S
2019+PB
SMA-S
85400
询价
CROWNPO
22+
85400
询价
Crownpo
SMA-S
85400
一级代理 原装正品假一罚十价格优势长期供货
询价
更多FM230-N供应商 更新时间2024-5-15 10:30:00