FP250UF

HighVoltageRectifierStacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded

FP250UF

HighVoltageRectifierStacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded

FPSS250B

FPSSERIESPRESSURESENSOR

FPSS250U

FPSSERIESPRESSURESENSOR

FR-250

FLAMERETARDENTCARDGUIDE

FRF250D

23A,200V,0.115Ohm,RadHard,N-ChannelPowerMOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

FRF250H

23A,200V,0.115Ohm,RadHard,N-ChannelPowerMOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

FRF250R

23A,200V,0.115Ohm,RadHard,N-ChannelPowerMOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

FRK250

iscN-ChannelMOSFETTransistor

DESCRIPTION •27A,200V,RDS(on)=0.1Ω •SecondGenerationRadHardMOSFETResults FromNewDesignConcepts APPLICATIONS Itisspeciallydesignedandprocessedto exhibitminimalcharacteristicchangestototaldoseandneutron exposures.Designandprocessingeffortsarealsodi

FRK250D

27A,200V,0.100Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro