丝印：FLK；Package：SOD123FL；Silicon Planar Zener Diodes

文件：385.89 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：FLK；Package：SOD-123FL；Silicon Planar Zener Diodes

文件：336.37 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：FLK；Silicon Planar Zener Diodes

文件：502.33 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

X, Ku Band Power GaAs FET

DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. FEATURES • High Output Power: P1dB = 20.5dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd =

文件：110.19 Kbytes 页数：4 Pages

EUDYNA

GaAs FET & HEMT Chips

DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATU

文件：59.25 Kbytes 页数：4 Pages

EUDYNA

X, Ku Band Power GaAs FET

DESCRIPTION The FLK207MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. FEATURES • High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27(Typ.)

文件：92.97 Kbytes 页数：4 Pages

EUDYNA

GaAs FET & HEMT Chips

DESCRIPTION The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance FEATUR

文件：70.33 Kbytes 页数：4 Pages

EUDYNA

Trousse de lampes fluorescentes et accessoires

文件：54.12 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

X, Ku Band Power GaAs FET

文件：84.07 Kbytes 页数：4 Pages

EUDYNA

GaAs FET & HEMT Chips

文件：97.6 Kbytes 页数：4 Pages

EUDYNA