FK20UM-6

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FK20UM-6

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................300V ●rDS(ON)(MAX).............................................................0.33Ω ●ID........................................................................................

FK20UM-6

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................300V ●rDS(ON)(MAX).............................................................0.33Ω ●ID........................................................................................

FK20UM-6

MITSUBISHI Nch POWER MOSFET

FK20UM-6_15

HIGH-SPEED SWITCHING USE

FS20UM-6

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.26Ω ●ID......................................................................................

FS20UM-6

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.26Ω ●ID......................................................................................

FS20UM-6

MITSUBISHINchPOWERMOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.26Ω ●ID......................................................................................

FS20UM-6

HIGH-SPEEDSWITCHINGUSE

FS20UM-6

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.