isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

HIGH-SPEED SWITCHING USE

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RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

文件：112.24 Kbytes 页数：8 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

文件：112.68 Kbytes 页数：8 Pages

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瑞萨

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI

三菱电机

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI

三菱电机