FHX35LG数据手册SUMITOMO中文资料规格书
FHX35LG规格书详情
描述 Description
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
特性 Features
• Low Noise Figure: 1.2B (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤ 0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
技术参数
- 制造商编号
：FHX35LG
- 生产厂家
：SUMITOMO
- Gas (dB)
：10
- VDS (V)
：3
- IDS(DC) (mA)
：10
- Specified Freq. (GHz)
：12
- Package
：LG
- Application
：Low Noise Amp
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUMITOMO |
21+ |
标准封装 |
343 |
进口原装,订货渠道! |
询价 | ||
FUJITSU/富士通 |
25+ |
SMT |
4647 |
原装正品,假一罚十! |
询价 | ||
FUJITSU/富士通 |
25+ |
GD-24 |
14764 |
FUJITSU/富士通原装特价FHX35LG即刻询购立享优惠#长期有货 |
询价 | ||
SUMITOMO |
1916+ |
假一赔十 |
1979 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SUMITOMO |
2021+ |
3000 |
十年专营原装现货,假一赔十 |
询价 | |||
SUMITOMO |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
FUJITSU/富士通 |
24+ |
12000 |
原装正品 有挂就有货 |
询价 | |||
SUMITOMO |
4F03 |
4 |
4F03 |
询价 | |||
SUMITOMO |
21+ |
假一赔十 |
549 |
原装现货假一赔十 |
询价 | ||
SUMITOMO |
23+ |
4439 |
原厂原装正品 |
询价 |
