低压MOS管

FHD70N03C采用先进的trench工艺来获得优秀的FOM（RDSon*Qg）,广泛使用在锂电池保护板。

FeiHong

飞虹

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE70N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

文件：299.24 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：302.99 Kbytes 页数：5 Pages

ETL

亚历电子

N-Channel Enhancement-Mode MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency

文件：102.64 Kbytes 页数：5 Pages

GE