IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS. F

文件：343.45 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS. F

文件：343.24 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS. F

文件：343.24 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS. • Maximum Junction Temperature TJ = 175C\n• Positive Temperature Coefficient\n• High Current Capability\n• Smooth and Optimized Switching\n• Low Switching Loss\n• RoHS Compliant;

ONSEMI

安森美半导体