FFSH5065B-F155

丝印：FFSH5065B；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D2, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

FFSH5065B-F155

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 650V, D2, TO-247-2L

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generat; • Max Junction Temperature 175°C\n• Avalanche Rated 225 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n• Low Vf @ TJ:175 °C\n\n;

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