丝印：FFSH2065BDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：242.66 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSH2065BDN；Package：TO-247-3LD；Silicon Carbide Schottky Diode, 650 V, 20 A

文件：321.7 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-3L

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generat • Max Junction Temperature 175C\n• Avalanche Rated 49 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n• Low Vf @ TJ:175 °C;

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安森美半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：650V 20A SIC SBD GEN1.5

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安森美半导体